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Ferroelectrics: Historical Introduction
Содержание
- 1. Ferroelectrics: Historical Introduction
- 2. Ferroelectricity= reversible spontaneous polarizationAsymmetric crystal structure is required!
- 3. Ferroelectricity= reversible spontaneous polarization
- 4. Ferroelectric materialsTypical ferroelectrics are complicated ceramic compounds
- 5. Early years (1920-1930)FE effect first discovered in
- 6. Discrete elements (1940-1960)Materials: ceramics (BT, PZT, LT,
- 7. Hybrid microelectonics (1970-1990) Materials: thin films (PZT,
- 8. Integrated circuits (since 2000)Materials: ultra thin films
- 9. Скачать презентанцию
Ferroelectricity= reversible spontaneous polarizationAsymmetric crystal structure is required!
Слайды и текст этой презентации
Слайд 2Ferroelectricity
= reversible spontaneous polarization
Asymmetric crystal structure is required!
Слайд 4Ferroelectric materials
Typical ferroelectrics are complicated ceramic compounds of transition metals
( titanates, niobates, tantalates, etc.)
pyroelectrics and piezoelectrics
Слайд 5Early years (1920-1930)
FE effect first discovered in Rochelle salt by
Valasek (1920)
Materials: Single crystalls (Rochelle salt, ADP, KDP)
Methods: Solution growth
Applications:
Photo pickup
Слайд 6Discrete elements (1940-1960)
Materials: ceramics (BT, PZT, LT, SBN, etc.)
Methods: casting,
pressing, evaporation, sputtering
Applications: Hi-k Caps, acoustic tranducers, filters, heat detectors
1952:
PZT was synthesized in Tokyo Institute of Technology
Слайд 7Hybrid microelectonics (1970-1990)
Materials: thin films (PZT, PZLT, PLT, LN,
SBN)
Methods: sol-gel, LPE, MBE, CVD, MOCVD, PECVD
Applications: MEMS, NVM, IR
sensorsPerovskite structure materials (Perovskii, 1895)
Слайд 8Integrated circuits (since 2000)
Materials: ultra thin films (HfO2, ZrO2)
Methods: CVD,
MOCVD, ALD
Applications: NVM, NN, IR starring arrays
Main problems: phase transitions,
FE induced/suppressed by stress and strain and influenced by surface states and defects.
